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SMMBTA56LT1G

High-voltage PNP transistor for reliable switching.

Key Features Device Type: PNP Bipolar Junction Transistor Configuration: Single Collector-Base Voltage (V<sub>CB): 80 V Collector-Emitter Voltage (V<sub>CE): 80 V Emitter-Base Voltage (V<sub>EB): 5 V Collector Current (I<sub>C): 500 mA Power Dissipation (P<sub>D): 225 mW DC Current Gain (h<sub>FE): 100 to 250 at 10 mA, 5 V Operating Temperature Range: -55°C to +150°C Mounting Style: Surface Mount Package / Case: SOT-23-3 RoHS: Compliant